advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 60v good thermal performance r ds(on) 72m ? fast switching performance i d 9a rohs compliant p-ch bv dss -60v r ds(on) 125m ? description i d -6a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 60 -60 v v gs gate-source voltage + 25 + 25 v i d @t c =25 continuous drain current 3 9 -6 a i d @t c =100 continuous drain current 3 6 -4 a i dm pulsed drain current 1 30 -30 a p d @t c =25 total power dissipation 8.9 w linear derating factor 0.07 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value units rthj-c maximum thermal resistance, junction-case 3 14 /w rthj-a maximum thermal resistance, junction-ambient 3 110 /w data and specifications subject to change without notice 201108113 parameter 1 thermal data AP4578GH-HF halogen-free product a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g2 d2 s2 g1 d1 s1 s1 to-252-4l g1 s2 g2 d1/d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.05 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 72 m ? v gs =4.5v, i d =3a - - 90 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 8 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =48v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 9 15 nc q gs gate-source charge v ds =48v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =30v - 7 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 ? -21- ns t f fall time v gs =10v - 5 - ns c iss input capacitance v gs =0v - 750 1200 pf c oss output capacitance v ds =25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 1.5 2.3 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =5a, v gs =0v - 33 - ns q rr reverse recovery charge di/dt=100a/s - 55 - nc AP4578GH-HF 2
AP4578GH-HF p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 ,i d =-1ma - -0.04 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-3a - - 125 m ? v gs =-4.5v, i d =-2a - - 150 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-3a - 5 - s i dss drain-source leakage current v ds =-60v, v gs =0v - - -10 ua drain-source leakage current (t j =125 o c) v ds =-48v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-3a - 13 21 nc q gs gate-source charge v ds =-48v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-30v - 11 - ns t r rise time i d =-1a - 5 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =-10v - 35 - ns t f fall time r d =30 ? -7- ns c iss input capacitance v gs =0v - 1030 1650 pf c oss output capacitance v ds =-25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 5 7.5 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-3a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-3a, v gs =0v - 42 - ns q rr reverse recovery charge di/dt=-100a/s - 82 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.n-ch , p-ch are same . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3
AP4578GH-HF n-channel fig 1. typical output characteristics fig 2. typical output characteristics -6.3 -5 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 5 10 15 20 25 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 5 10 15 20 25 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 55 65 75 85 95 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
a p4578gh-hf n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 5 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =48v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0 5 10 15 20 25 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on)
AP4578GH-HF p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 5 10 15 20 01234567 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0 5 10 15 20 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 95 105 115 125 135 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-2a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-3a v g = - 10v 0 1 2 3 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
AP4578GH-HF p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 7 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0.0 5.0 10.0 15.0 20.0 25.0 30.0 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-3a v ds =-48v 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0 5 10 15 20 02468 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on)
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